| PART |
Description |
Maker |
| HYS72T256322HP-3.7-A HYS72T256322HP-3S-A HYB18T1G4 |
240-Pin Dual-Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T32000HP |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYB18T1G400AF HYS72T128001HR |
240-Pin Registered DDR SDRAM Modules
|
Qimonda AG
http://
|
| HYS72T64001HP |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64000HP HYB18T512800AF HYB18T512400AF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64301HP-3.7-A |
240-Pin Registered DDR2 SDRAM Modules 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| M393T6553BZ3-CD5_CC M393T2950BG0-CD5_CC M393T2950B |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 70287-1015 0702871015 |
2.54mm (.100) Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 0702871220 70287-1220 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
|
Molex Electronics Ltd.
|
|
